Forscherprofil


Prof. Dr.-Ing. habil Wilfried Klix

Fakultät Elektrotechnik | Professur für Theoretische Elektrotechnik/Optoelektronik

E-Mail: wilfried.klix(at)htw-dresden.de

21Publikationen
  • Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications
    T. Seiler, M. Jüttner, T. Herrmann, A. Zaka, L. Pirro, J. Hoentschel, W. Klix, R. Stenzel, 2019. Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications. EUROSOIULIS2019, P. 27, Grenoble, France, April 01-03 2019..
  • Influence of Ionization Modelling for Mg-doped GaN on Transfer and Breakdown Characteristics of Vertical GaN-MOSFET
    WEIGEL, Martin, STENZEL, Roland, KLIX, Wilfried, HENTSCHEL, Rico, WACHOWIAK, Andre, MIKOLAJICK, Thomas, 2016. Influence of Ionization Modelling for Mg-doped GaN on Transfer and Breakdown Characteristics of Vertical GaN-MOSFET. 40th Workshop on Compound Semiconductor Devices and Integrated Circuits.
  • Investigation of vertical GaN-MOSFET breakdown effects by device simulation
    WEIGEL, Martin, KLIX, Wilfried, STENZEL, Roland, HENTSCHEL, Rico, WACHOWIAK, Andre, MIKOLAJICK, Thomas, 2015. Investigation of vertical GaN-MOSFET breakdown effects by device simulation. Proc. of 39nd Workshop on Compound Semiconductor Devices and Integrated Circuits, Smolenice Castle, Slovakia 2015, pp. 45-46.
  • Entwicklung von energieeffizienten Hochleistungstransistoren
    HERRMANN, Tom, FLACHOWSKY, Stefan, ILLGEN, Ralf, KLIX, Wilfried, STENZEL, Roland, 2012. Entwicklung von energieeffizienten Hochleistungstransistoren. Hochschulzeitschrift WISSEND, Hochschule für Wirtschaft und Technik Dresden, Nr. 2, S. 20 – 23.
  • Strained Isolation Oxide as Novel Overall Stress Element for Tri-Gate Transistors of 22nm CMOS and Beyond
    WEI, Andy , HERRMANN, Tom, FLACHOWSKY, Stefan, ILLGEN, Ralf, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2012. Strained Isolation Oxide as Novel Overall Stress Element for Tri-Gate Transistors of 22nm CMOS and Beyond. ISCDG 2012 – International Semiconductor Conference, Grenoble, Frankreich. DOI: 10.1109/ULIS.2016.7440037
  • Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels
    FLACHOWSKY, Stefan, HERRMANN, Tom, HöNTSCHEL, Jan, ILLGEN, Ralf, YANG ONG, Shiang, WIATR, Maciej, BALDAUF, Tim, KLIX, Wilfried, STENZEL, Roland, 2012. Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels. 2012 13th International Conference on Ultimate Integration on Silicon (ULIS),Grenoble, France, 06.03.-07.2012, pp. 5-8. DOI: 10.1109/ULIS.2012.6193343
  • Study of 22/20nm tri-gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process
    T. Baldauf, A. Wei, R. Illgen, S. Flachowsky, T. Herrmann, J. Höntschel, M. Horstmann, W. Klix, R. Stenzel, 2012. Study of 22/20nm tri-gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process. International Semiconductor Device Research Symposium 2011, Maryland, Proceedings, 07.12.-09.12.2011, Paper WP 11-09-04. DOI: 10.1109/ISDRS.2011.6135350
  • Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond
    STENZEL, Roland, KLIX, Wilfried, WEI, Andy, ILLGEN, Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, HöNTSCHEL, Jan, HORSTMANN, Manfred, 2012. Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond. IEEE Int. Semiconductor Conference Dresden - Grenoble 2012 (ISCDG), Proceedings, Session B.2.
  • Study of 22/20nm Tri-Gate Transistors Compartible in a Low-Cost Hybrid FinFET/Planar CMOS Process
    WEI, Andy, HERRMANN, Tom, FLACHOWSKY, Stefan, ILLGEN, Ralf, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2011. Study of 22/20nm Tri-Gate Transistors Compartible in a Low-Cost Hybrid FinFET/Planar CMOS Process. SDRS 2011 – International Semiconductor Device Research Symposium, College Park, USA. DOI: 10.1109/ISDRS.2011.6135350
  • Suppression of the corner effects in a 22 nm hybrid tri-gate/planar process
    WEI , Andy, HERRMANN, Tom, FLACHOWSKY, Stefan, ILLGEN, Ralf, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2011. Suppression of the corner effects in a 22 nm hybrid tri-gate/planar process. IEEE Int. Semiconductor Conference Dresden 2011, 27.09.-28.09. 2011, Proceedings, Paper 1.24. DOI: 10.1109/SCD.2011.6068714
  • Suppression of the Corner Effects in a 22 nm Hybrid Tri-Gate/Planar Process
    WEI, Andy, HERRMANN, Tom, FLACHOWSKY, Stefan, ILLGEN, Ralf, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2011. Suppression of the Corner Effects in a 22 nm Hybrid Tri-Gate/Planar Process. SCD 2011 – Semiconductor Conference, Dresden, Deutschland. DOI: 10.1109/SCD.2011.6068714
  • Simulation and Optimization of Tri-Gates in a 22nm Hybrid Tri-Gate/Planar Process
    WEI, Andy, ILLGEN, Ralf, FLACHOWSKY, Stefan , HERRMANN, Tom, FEUDEL, Thomas, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2011. Simulation and Optimization of Tri-Gates in a 22nm Hybrid Tri-Gate/Planar Process. ULIS 2011 – International Conference on Ultimate Integration of Silicon, Cork, Irland. DOI: 10.1109/ULIS.2011.5757974
  • Simulation and optimization of tri-gates in a 22 nm hybrid tri-gate/planar process
    WEI, Andy, ILLGEN, Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, FEUDEL, Thomas, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2011. Simulation and optimization of tri-gates in a 22 nm hybrid tri-gate/planar process. 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, Cork, Proceedings, pp.3 - 6. DOI: 10.1109/ULIS.2011.5757974
  • Optimization of Stressor Overlayer Parameters for MOSFET's in "Cool Silicon" – Technologies
    ILLGEN, Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, FEUDEL , Thomas, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2010. Optimization of Stressor Overlayer Parameters for MOSFET's in "Cool Silicon" – Technologies. Nanofair – 8th International Nanotechnology Symposium, Dresden, Deutschland.
  • Analyse und Optimierung von verspannten Schichten auf CMOS–Transistoren
    ILLGEN, Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, FEUDEL, Thomas , HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2010. Analyse und Optimierung von verspannten Schichten auf CMOS–Transistoren. 11. Nachwuchswissenschaftlerkonferenz, FH Schmalkalden, Deutschland; Tagungsband S. 181-186.
  • Understanding strain-induced drive-current enhancement in strained-silicon n-MOSFET and p-MOSFET.
    FLACHOWSKY, Stefan, WEI, Andy, ILLGEN, Ralf, HERRMANN, Tom, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2010. Understanding strain-induced drive-current enhancement in strained-silicon n-MOSFET and p-MOSFET.. IEEE Transactions on Electron Devices, Vol. 57, No. 6, Juni 2010.
  • Optimization of stressor overlayer parameters for MOSFETs in „Cool Silicon“ – Technologies.
    ILLGEN, Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, FEUDEL, Thomas, HöNTSCHEL, Jan, HORSTMANN, Manfred, KLIX, Wilfried, STENZEL, Roland, 2010. Optimization of stressor overlayer parameters for MOSFETs in „Cool Silicon“ – Technologies.. 8th International Nanotechnology Symposium, Dresden, 06.07-07.07.2010.
  • Stress memorization technique for n-MOSFETs: Where is the stress?
    Flachowsky, S.; Illgen, R.; Herrmann, T.; Baldauf,T.; Wei, A.; Höntschel, J.; Klix, W.; Stenzel, R.; Horstmann, M.:, 2010. Stress memorization technique for n-MOSFETs: Where is the stress?. 11th International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, 17.03. - 19.03.2010.
  • Simulation of asymmetric doped high performance SOI MOSFETs for VLSI CMOS technologies
    Herrmann, T.; Flachowsky, S.; Illgen, R.; Klix, W.; Stenzel, R.; Höntschel, J.; Feudel, T.; Horstmann, M.:, 2010. Simulation of asymmetric doped high performance SOI MOSFETs for VLSI CMOS technologies. Journal of Vacuum Science and Technology.
  • Effect of source/drain extension dopant species on device performance of non-diffuse embedded SiGe strained SOI P-MOSFETs.
    ILLGEN , Ralf, FLACHOWSKY, Stefan, HERRMANN, Tom, KLIX, Wilfried, STENZEL, Roland, FEUDEL, Thomas, HöNTSCHEL, Jan, HORSTMANN, Manfred, 2010. Effect of source/drain extension dopant species on device performance of non-diffuse embedded SiGe strained SOI P-MOSFETs.. Journal of Vacuum Science & Technology.
  • Detailed simulation study of embedded SiGe and Si:C S/D stressors in nano scaled SOI MOSFETs
    FLACHOWSKY, Stefan, ILLGEN, Ralf, HERRMANN, Tom, KLIX, Wilfried, STENZEL, Roland, OSTERMAY, Ina, WEI, Andy, HöNTSCHEL, Jan, HORSTMANN, Manfred, 2010. Detailed simulation study of embedded SiGe and Si:C S/D stressors in nano scaled SOI MOSFETs. Journal of Vacuum Science and Technology.